IRFI630G, SiHFI630G Power MOSFET

技术特性
  • Isolated Package
  • High Voltage Isolation = 2.5 kVRMS (t = 60 s;     f = 60 Hz)
  • Sink to Lead Creepage Distance = 4.8 mm
Datasheet
Application Notes
General Information
RC Thermal Models
Reliability Data
IRFI630G, SiHFI630G 91148
Device Application Note AN949 91214
General Information 91155
IRFI630G_RC, SiHFI630G_RC 91148
Package Reliability 91155
Silicon Technology Reliability 63402
IRFI630G, SiHFI630G Power MOSFET 91148