MRF8P23160WH: 2300-2400 MHz, 30 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs
NI-780-4, NI-780S-4 Package Image
特性
- Designed for Wide Instantaneous Bandwidth Applications
- Designed for Wideband Applications that Require 100 MHz Signal Bandwidth
- Production Tested in a Symmetrical Doherty Configuration
- 100% PAR Tested for Guaranteed Output Power Capability
- Characterized with Large-Signal Load-Pull Parameters and Common Source S-Parameters
- Internally Matched for Ease of Use
- Integrated ESD Protection
- Greater Negative Gate-Source Voltage Range for Improved Class C Operation
- Designed for Digital Predistortion Error Correction Systems
- RoHS Compliant
- NI-780-4 in Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13-inch Reel. NI-780S-4 in Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13-inch Reel.
Data Sheets (1)
| Name/Description | Modified Date |
|---|---|
| MRF8P23160WHR3, MRF8P23160WHSR3 2300-2400 MHz, 30 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs (REV 0) PDF (548.5 kB) MRF8P23160WH | 16 Dec 2011 |
Application Notes (1)
| Name/Description | Modified Date |
|---|---|
| AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 | 29 Apr 2014 |
Engineering Bulletins (1)
| Name/Description | Modified Date |
|---|---|
| Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 | 19 Jan 2004 |
Selector Guides (1)
| Name/Description | Modified Date |
|---|---|
| RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 | 26 May 2016 |
Package Information (2)
| Name/Description | Modified Date |
|---|---|
| 98ASA10718D, NI-C, 19.81x9.34x3.75, Pitch 4.44, 5 Pins (REV C) PDF (42.9 kB) 98ASA10718D | 15 Aug 2016 |
| 98ASA10793D (REV A) PDF (47.9 kB) 98ASA10793D | 21 Mar 2016 |
Ordering Information
| Product | Status | Frequency Min (Min) (MHz) | Frequency Max (Max) (MHz) | Supply Voltage (Typ) (V) | P1dB (Typ) (dBm) | P1dB (Typ) (W) | Output Power (Typ) (W) @ Intermodulation Level at Test Signal | Test Signal | Power Gain (Typ) (dB) @ f (MHz) | Efficiency (Typ) (%) | Thermal Resistance (Spec)(°C/W) | Matching | Class | Die Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MRF8P23160WHSR3 | Active | 2300 | 2400 | 28 | 51.8 | 150 | 30 @ AVG | W-CDMA | 14.1 @ 2320 | 36.5 | 0.69 | I/O | AB | LDMOS |
| MRF8P23160WHR3 | No Longer Manufactured | 2300 | 2400 | 28 | 51.8 | 150 | 30 @ AVG | W-CDMA | 14.1 @ 2320 | 36.5 | 0.69 | I/O | AB | LDMOS |
| MRF8P23160WHSR5 | No Longer Manufactured | 2300 | 2400 | 28 | 51.8 | 150 | 30 @ AVG | W-CDMA | 14.1 @ 2320 | 36.5 | 0.69 | I/O | AB | LDMOS |
| MRF8P23160WHR5 | No Longer Manufactured | 2300 | 2400 | 28 | 51.8 | 150 | 30 @ AVG | W-CDMA | 14.1 @ 2320 | 36.5 | 0.69 | I/O | AB | LDMOS |
Package Information
| Package Description | Outline Version | Packing | Product Status | Part Number | Chemical Content | RoHS / Pb FreeChina RoHS Lookup | PPT (°C) |
|---|---|---|---|---|---|---|---|
| NI-780HS-4 | 98ASA10718D | MPQ - 250 REELPOQ - 250 REEL | Active | MRF8P23160WHSR3 | MRF8P23160WHSR3.pdf |   | 260 |
| No Longer Manufactured | MRF8P23160WHSR5 | MRF8P23160WHSR5.pdf | | 260 | |||
| NI 780H-4 | 98ASA10793D | MPQ - 250 REELPOQ - 250 REEL | No Longer Manufactured | MRF8P23160WHR3 | MRF8P23160WHR3.pdf | | 260 |
| No Longer Manufactured | MRF8P23160WHR5 | MRF8P23160WHR5.pdf | | 260 |
- AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
- Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
- RF Products Selector Guide MMT20303H
- 98ASA10718D, NI-C, 19.81x9.34x3.75, Pitch 4.44, 5 Pins MMRF1310H
- MRF8P23160WHSR3.pdf MRF8P23160WH
- MRF8P23160WHSR5.pdf MRF8P23160WH
- 98ASA10793D MMRF1310H
- MRF8P23160WHR3.pdf MRF8P23160WH
- MRF8P23160WHR5.pdf MRF8P23160WH
