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首页＞ATMEL 爱特梅尔＞DataFlash存储器＞AT26DF041

ATMEL 爱特梅尔串行FLASH 存储器AT26DF041 AT26DF041 概述 The AT26DF041 is a 3.0-volt or 2.7-volt only, serial interface Flash memory ideally suited for a wide variety of program code- and data-storage applications. Its 4,194,304 bits of memory are organized as 2048 pages of 256 bytes each. Unlike conventional Flash memories that are accessed randomly with multiple address lines and a parallel interface, the DataFlash® uses an SPI serial interface to sequentially access its data.The DataFlash supports SPI mode 0 and mode 3. The simple serial interface facilitates hardware layout, increases system reliability, minimizes switching noise, and
reduces package size and active pin count. The device is optimized for use in many commercial and industrial applications where high density, low pin count, low voltage,and low power are essential. To allow for simple in-system reprogrammability, the AT26DF041 does not require high input voltages for programming. The device operates from a single power supply, 3.0V to 3.6V or 2.7V to 3.6V, for both the program and read operations. The AT26DF041 is enabled through the chip select pin (CS) and accessed via a three-wire interface consisting of the Serial Input (SI), Serial Output (SO), and the Serial Clock (SCK).
To allow for simple in-system reprogrammability, the AT26DF041 does not require high input voltages for programming. The device operates from a single power supply, 3.0V to 3.6V or 2.7V to 3.6V, for both the program and read operations. The AT26DF041 is enabled through the chip select pin (CS) and accessed via a three-wire interface consisting of the Serial Input (SI), Serial Output (SO), and the Serial Clock (SCK).All program and erase cycles are self-timed, and no separate erase cycle is required when using the Page Program with Auto-Erase feature. AT26DF041 特性

• Single 3.0V - 3.6V or 2.7V - 3.6V Supply
  • Serial Peripheral Interface (SPI) Compatible
  • 33 MHz Max Clock Frequency
  • Byte Program Operation
  • Page Program Operation
  – 2048 Pages (256 Bytes/Page) Main Memory
  – Single Cycle Reprogram Capability (Page Erase and Program)
  • Supports Optional Page and Block (2 KB or 4 KB) Erase Operations
  • Continuous Read Capability through Entire Array
  – Ideal for Code Shadowing Applications
  • Hardware Data Protection Feature for the Top 64 KB of Memory
  • Low Power Dissipation
  – 4 mA Active Read Current Typical
  – 2 μA CMOS Standby Current Typical
  • 5.0V-tolerant Inputs: SI, SCK, CS, and WP Pins
  • 100,000 Program/Erase Cycles Typical
  • Data Retention – 20 years

AT26DF041 订购型号