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首页＞ATMEL 爱特梅尔＞DataFlash存储器＞AT45DB011D

ATMEL 爱特梅尔串行FLASH 存储器AT45DB011D AT45DB011D 概述 The AT45DB011D is a 2.7V, serial-interface Flash memory ideally suited for a wide variety of digital voice-, image-, program code- and data-storage applications. The AT45DB011D supports RapidS serial interface for applications requiring very high speed operations. RapidS serial interface is SPI compatible for frequencies up to 66 MHz. Its 1,081,344 bits of memory are organized as 512 pages of 256 bytes or 264 bytes each. In addition to the main memory, the AT45DB011D also contains one
SRAM buffer of 256/264 bytes. EEPROM emulation (bit or byte alterability) is easily
handled with a self-contained three step read-modify-write operation. Unlike conventional
Flash memories that are accessed randomly with multiple address lines and a parallel interface, the DataFlash® uses a RapidS serial interface to sequentially access its data. The simple sequential access dramatically reduces active pin count, facilitates hardware layout, increases system reliability, minimizes switching noise,and reduces package size.
The device is optimized for use in many commercial and industrial applications where high-density,
low-pin count, low-voltage and low-power are essential.
To allow for simple in-system reprogrammability, the AT45DB011D does not require high input
voltages for programming. The device operates from a single power supply, 2.7V to 3.6V, for
both the program and read operations. The AT45DB011D is enabled through the chip select pin
(CS) and accessed via a three-wire interface consisting of the Serial Input (SI), Serial Output
(SO), and the Serial Clock (SCK).
All programming and erase cycles are self-timed. AT45DB011D 特性

• Single 2.7V to 3.6V Supply
  • RapidS® Serial Interface: 66 MHz Maximum Clock Frequency
  – SPI Compatible Modes 0 and 3
  • User Configurable Page Size
  – 256 Bytes per Page
  – 264 Bytes per Page
  – Page Size Can Be Factory Pre-configured for 256 Bytes
  • Page Program Operation
  – Intelligent Programming Operation
  – 512 Pages (256/264 Bytes/Page) Main Memory
  • Flexible Erase Options
  – Page Erase (256 Bytes)
  – Block Erase (2 Kbytes)
  – Sector Erase (32 Kbytes)
  – Chip Erase (1 Mbits)
  • One SRAM Data Buffer (256/264 Bytes)
  • Continuous Read Capability through Entire Array
  – Ideal for Code Shadowing Applications
  • Low-power Dissipation
  – 7 mA Active Read Current Typical
  – 25 μA Standby Current Typical
  – 5 μA Deep Power-down Typical
  • Hardware and Software Data Protection Features
  – Individual Sector
  • Sector Lockdown for Secure Code and Data Storage
  – Individual Sector
  • Security: 128-byte Security Register
  – 64-byte User Programmable Space
  – Unique 64-byte Device Identifier
  • JEDEC Standard Manufacturer and Device ID Read
  • 100,000 Program/Erase Cycles Per Page Minimum
  • Data Retention – 20 Years
  • Industrial Temperature Range
  • Green (Pb/Halide-free/RoHS Compliant) Packaging Options

AT45DB011D 订购型号