HMC-ALH376 Low Noise Amplifier Chip, 35 - 45 GHz

The HMC-ALH376 is a GaAs MMIC HEMT three stages, self-biased Low Noise Amplifier die which operates between 35 and 45 GHz. The amplifier provides 16 dB of gain, a 2 dB noise figure and +6 dBm of output power at 1 dB gain compression while requiring only 87 mA from a single +4V supply. This self-biased LNA is ideal for integration into hybrid assemblies or Multi-Chip-Modules (MCMs) due to its small size (3.9 mm²).

技术特性
  • Noise Figure: 2 dB
  • Gain: 16 dB @ 40 GHz
  • P1dB Output Power: +6 dBm
  • Supply Voltage: +4V @ 87 mA
  • Die Size: 2.7 x 1.44 x 0.1 mm
订购信息 Ordering Information
  • HMC-ALH376
应用领域 APPLICATION
  • Point-to-Point Radios
  • Point-to-Multi-Point Radios
  • Test Equipment & Sensors
  • Military & Space
技术指标
Freq. (GHz) Function Gain (dB) OIP3 (dBm) NF (dB) P1dB (dBm) Bias Supply Package
35 - 45 Low Noise 16 - 2 6 +4V @ 87mA Chip
功能框图 Functional Block Diagram

HMC-ALH376 功能框图

应用技术支持与电子电路设计开发资源下载 版本信息 大小
HMC-ALH376 数据资料DataSheet下载:pdf Rev.V2 2 页