HMC999 10 Watt GaN Power Amplifier Chip, 0.01 - 10 GHz
The HMC999 is a GaN HEMT MMIC Distributed Power Amplifier which operates between 0.01 and 10 GHz. The amplifier provides 11 dB of gain, 47 dBm output IP3 and 38 dBm of output power at 1 dB gain compression while requiring 1100 mA from a +48 V supply. The HMC999 amplifier provides 10 Watts of saturated power in a chip area only 7 mm², equating to a power density of 1.5 W/mm² over 3 decades of bandwidth. All data is taken with the chip connected via two 25 mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils).
技术特性
- High P1dB Output Power: 38 dBm
- High Psat Output Power: 40 dBm
- High Output IP3: 47 dBm
- High Gain: 11 dB
- Supply Voltage: +28V, +40V
or +48V @ 1100 mA
- 50 Ohm Matched Input/Output
- Die Size: 3.66 x 1.91 x 0.1 mm
应用领域 APPLICATION
- Test Instrumentation
- Military Communications
- Jammers and Decoys
- Radar, EW & ECM Subsystems
- Space
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技术指标
| Freq. (GHz) |
Function |
Gain (dB) |
OIP3 (dBm) |
NF (dB) |
P1dB (dBm) |
Bias Supply |
Package |
| 0.01 - 10 |
10 Watt GaN Power Amplifier |
11 |
47 |
- |
38 |
+48V @
1100 mA |
Chip |
订购信息 Ordering Information
功能框图 Functional Block Diagram
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