MRF10031 Microwave Power Silicon NPN Transistor 30W (peak), 960–1215MHz, 36V

Designed for 960–1215 MHz long or short pulse common base amplifier applications such as JTIDS and Mode–S transmitters.

技术特性 Features
  • Guaranteed performance @ 960-1215MHz, 36Vdc
  • Output power: 30W peak
  • Minimum gain: 9.0dB min., 9.5dB typ.
  • 100% tested for load mismatch at all phase angles with 10:1 VSWR
  • Hermetically sealed, industry standard package
  • Silicon nitride passivated
  • Gold metallized, emitter ballasted for long life and resistance to
    metal migration
  • Internal input matching for broadband operation

应用技术支持与电子电路设计开发资源下载 版本信息 大小
MRF10031数据资料DataSheet下载:PDF Rev.V2 3页