MRF10350 Microwave Pulse Power Silicon NPN Transistor 350W (peak), 1025–1150MHz
Designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters.
技术特性 Features
- Guaranteed performance @ 1090 MHz
Output power = 350 W Peak
Gain = 8.5 dB min, 9.0 dB (typ.)
- 100% tested for load mismatch at all phase angles with 10:1 VSWR
- Hermetically sealed package
- Silicon nitride passivated
- Gold metallized, emitter ballasted for long life and resistance to metal migration
- Internal input and output matching
- Characterized using Mode–S pulse format
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