MRF150 RF Power FET 150W, to 150MHz, 50V

Designed primarily for linear large-signal output stages up to 150 MHz

技术特性 Features
  • Superior high order IMD
    IMD(d3) (150W PEP): –32dB (Typ.)
    IMD(d11) (150W PEP): –60dB (Typ.)
  • Specified 50V, 30MHz characteristics
    Output power = 150 Watts
    Power gain = 17 dB (Typ.)
    Efficiency = 45% (Typ.)
  • 100% tested for load mismatch at all phase angles

应用技术支持与电子电路设计开发资源下载 版本信息 大小
MRF150数据资料DataSheet下载:PDF Rev.V2 3页