PH0814-40 Wireless Bipolar Power Transistor 40W, 850-1450MHz, 28V

技术特性 Features
  • NPN silicon microwave power transistor
  • Common emitter configuration
  • Broadband Class AB operation
  • Interdigitated geometry
  • Diffused emitter ballasting resistors
  • Gold metalization system
  • Internal input and output impedance matching
  • Hermetic metal / ceramic package

应用技术支持与电子电路设计开发资源下载 版本信息 大小
PH0814-40数据资料DataSheet下载:PDF Rev.V2 3页