2PB1424 20 V, 3 A PNP low VCEsat (BISS) transistor

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT89 (SC-62/TO-243) flat lead Surface-Mounted Device (SMD) plastic package.

NPN complement: 2PD2150

产品特点 Features
  • Low collector-emitter saturation voltage VCEsat
  • High collector current capability IC and ICM
  • High collector current gain (hFE) at high IC
  • High efficiency due to less heat generation
  • Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
应用
  • DC-to-DC conversion
  • MOSFET gate driving
  • Motor control
  • Charging circuits
  • Power switches (e.g. motors, fans)
  • Thin Film Transistor (TFT) backlight inverter
产品实物图
2PB1424 产品实物图
封装
型号 可订购的器件编号 订购码 (12NC) 产品状态 封装
2PB1424 2PB1424,115 9340 592 91115 量产 SOT89
外形图
封装版本 封装名称 封装说明
SOT89 SOT89 plastic surface-mounted package; die pad for good heat transfer; 3 leads
订货和供应
型号 订购码 (12NC) 可订购的器件编号 化学成分
2PB1424 2PB1424,115 9340 592 91115 2PB1424
2PB1424 技术支持
档案名称 标题 类型 格式
2PB1424 20 V, 3 A PNP low VCEsat (BISS) transistor Data sheet pdf
FS046 Philips Bipolar Transistors for Electronic Lighting Application note pdf
75017064 Bipolar Power Product Selection Guide Selection guide pdf