PBHV8118T 150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor

NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package

产品特点 Features
  • High voltage
  • Low collector-emitter saturation voltage VCEsat
  • High collector current capability IC and ICM
  • High collector current gain (hFE) at high IC
  • AEC-Q101 qualified
  • Small SMD plastic package
应用
  • LED driver for LED chain module
  • LCD backlighting
  • Automotive power management
  • Hook switch for wired telecom
  • Switch Mode Power Supply (SMPS)
产品实物图
PBHV8118T 产品实物图
封装
型号 可订购的器件编号 订购码 (12NC) 产品状态 封装
PBHV8118T PBHV8118T,215 9340 641 95215 量产 SOT23 (TO-236AB)
外形图
封装版本 封装名称 封装说明
SOT23 TO-236AB plastic surface-mounted package; 3 leads
订货和供应
型号 订购码 (12NC) 可订购的器件编号 化学成分
PBHV8118T PBHV8118T,215 9340 641 95215 PBHV8118T
PBHV8118T 技术支持
档案名称 标题 类型 格式
PBHV8118T 180 V, 1 A NPN high-voltage low V_CEsat (BISS) transistor Data sheet pdf
AN11076 Thermal behavior of small-signal discretes on multilayer PCBs Application note pdf