PBSM5240PFH 40 V, 2 A PNP low VCEsat (BISS) transistor with N-channel Trench MOSFET
Combination of PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and N-channel Trench Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET). The device is housed in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package
产品特点 Features
- Very low collector-emitter saturation voltage VCEsat
- High collector current capability IC and ICM
- High energy efficiency due to less heat generation
- Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
|
应用
- Load switch
- Power management
- Power switches (e.g. motors, fans)
- Battery-driven devices
- Charging circuits
产品实物图
 |
封装
| 型号 |
可订购的器件编号 |
订购码 (12NC) |
产品状态 |
封装 |
| PBSM5240PFH |
PBSM5240PFH,115 |
9340 665 62115 |
量产 |
SOT1118
(DFN2020-6) |
外形图
| 封装版本 |
封装名称 |
封装说明 |
| SOT1118 |
DFN2020-6 |
plastic thermal enhanced ultra thin small outline package; no leads; 6 terminals; body 2 x 2 x 0.65 mm |
订货和供应
| 型号 |
订购码 (12NC) |
可订购的器件编号 |
化学成分 |
| PBSM5240PFH |
PBSM5240PFH,115 |
9340 665 62115 |
PBSM5240PFH |
PBSM5240PFH 技术支持
| 档案名称 |
标题 |
类型 |
格式 |
| PBSM5240PFH |
40 V, 2 A PNP low VCEsat (BISS) transistor with N-channel Trench MOSFET |
Data sheet |
pdf |
| LSYMTRA |
Letter Symbols - Transistors; General |
Other type |
pdf |
| AN10361 |
Philips BISS loadswitch solutions and the SOT666 BISS loadswitch demo board |
Application note |
pdf |
| 75016734 |
Downsize the footprint, boost the performance; NXP ultra-small diodes and transistors for portable applications |
Leaflet |
pdf |
