PBSS2515E 15 V, 0.5 A NPN low VCEsat (BISS) transistor

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in an ultra small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package.

PNP complement: PBSS3515E

产品特点 Features
  • Low collector-emitter saturation voltage VCEsat
  • High collector current capability IC and ICM
  • High collector current gain (hFE) at high IC
  • High efficiency due to less heat generation
  • Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
应用
  • DC-to-DC conversion
  • MOSFET gate driving
  • Motor control
  • Charging circuits
  • Low power switches (e.g. motors, fans)
  • Portable applications
产品实物图
PBSS2515E 产品实物图
封装
型号 可订购的器件编号 订购码 (12NC) 产品状态 封装
PBSS2515E PBSS2515E,115 9340 591 66115 量产 SOT416 (SC-75)
外形图
封装版本 封装名称 封装说明
SOT416 SC-75 plastic surface-mounted package; 3 leads
订货和供应
型号 订购码 (12NC) 可订购的器件编号 化学成分
PBSS2515E PBSS2515E,115 9340 591 66115 PBSS2515E
PBSS2515E 技术支持
档案名称 标题 类型 格式
PBSS2515E 15 V, 0.5 A NPN low VCEsat (BISS) transistor Data sheet pdf
LSYMTRA Letter Symbols - Transistors; General Other type pdf
AN10361 Philips BISS loadswitch solutions and the SOT666 BISS loadswitch demo board Application note pdf
75016734 Downsize the footprint, boost the performance; NXP ultra-small diodes and transistors for portable applications Leaflet pdf