PBSS2515VS 15 V low VCEsat NPN double transistor
NPN low VCEsat double transistor in a SOT666 plastic package.
PNP complement: PBSS3515VS
产品特点 Features
- 300 mW total power dissipation
- Very small 1.6 x 1.2 mm ultra thin package
- Excellent coplanarity due to straight leads
- Low collector-emitter saturation voltage
- High current capability
- Improved thermal behaviour due to flat lead
- Replaces two SC-75/SC-89 packaged low VCEsat transistors on same PCB area
- Reduces required PCB area
- Reduced pick and place costs
|
应用
- General purpose switching and muting
- Low frequency driver circuits
- LCD backlighting
- Audio frequency general purpose amplifier applications
- Battery driven equipment (mobile phones, video cameras and hand-held devices).
产品实物图
 |
封装
| 型号 |
可订购的器件编号 |
订购码 (12NC) |
产品状态 |
封装 |
| PBSS2515VS |
PBSS2515VS,115 |
9340 567 68115 |
量产 |
SOT666 |
| PBSS2515VS |
PBSS2515VS,315 |
9340 567 68315 |
量产 |
SOT666 |
外形图
| 封装版本 |
封装名称 |
封装说明 |
| SOT666 |
SOT666 |
plastic surface-mounted package; 6 leads |
订货和供应
| 型号 |
订购码 (12NC) |
可订购的器件编号 |
化学成分 |
| PBSS2515VS |
PBSS2515VS,115 |
9340 567 68115 |
PBSS2515VS |
| PBSS2515VS |
PBSS2515VS,315 |
9340 567 68315 |
PBSS2515VS |
PBSS2515VS 技术支持
| 档案名称 |
标题 |
类型 |
格式 |
| PBSS2515VS |
15 V low VCEsat NPN double transistor |
Data sheet |
pdf |
| AN10117 |
Medium Power Transistors and Rectifiers for Power Management Applications |
Application note |
pdf |
| AN11045 |
Next generation of NXP low VCEsat transistors: improved technology for discrete semiconductors |
Application note |
pdf |
| AN11076 |
Thermal behavior of small-signal discretes on multilayer PCBs |
Application note |
pdf |
| LSYMTRA |
Letter Symbols - Transistors; General |
Other type |
pdf |
| 75017090 |
Application guide; Portable devices and mobile handsets |
Selection guide |
pdf |
| 75016734 |
Downsize the footprint, boost the performance; NXP ultra-small diodes and transistors for portable applications |
Leaflet |
pdf |
