PBSS2540E 40 V, 500 mA NPN low VCEsat (BISS) transistor

NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT416 (SC-75) SMD plastic package.

PNP complement: PBS3540E

产品特点 Features
  • Low collector-emitter saturation voltage VCEsat
  • High collector current capability: IC and ICM
  • High collector current gain (hFE) at high IC
  • High efficiency due to less heat generation
  • Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
应用
  • DC-to-DC conversion
  • MOSFET gate driving
  • Motor control
  • Charging circuits
  • Low power switches (e.g. motors, fans)
产品实物图
PBSS2540E 产品实物图
封装
型号 可订购的器件编号 订购码 (12NC) 产品状态 封装
PBSS2540E PBSS2540E,115 9340 591 69115 量产 SOT416 (SC-75)
外形图
封装版本 封装名称 封装说明
SOT416 SC-75 plastic surface-mounted package; 3 leads
订货和供应
型号 订购码 (12NC) 可订购的器件编号 化学成分
PBSS2540E PBSS2540E,115 9340 591 69115 PBSS2540E
PBSS2540E 技术支持
档案名称 标题 类型 格式
PBSS2540E 40 V, 500 mA NPN low VCEsat (BISS) transistor Data sheet pdf
AN11045 Next generation of NXP low VCEsat transistors: improved technology for discrete semiconductors Application note pdf
AN11076 Thermal behavior of small-signal discretes on multilayer PCBs Application note pdf
LSYMTRA Letter Symbols - Transistors; General Other type pdf
75017090 Application guide; Portable devices and mobile handsets Selection guide pdf
75016734 Downsize the footprint, boost the performance; NXP ultra-small diodes and transistors for portable applications Leaflet pdf