PBSS301ND 20 V, 4 A NPN low VCEsat (BISS) transistor

NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.

PNP complement: PBSS301PD

产品特点 Features
  • Very low collector-emitter saturation resistance
  • Ultra low collector-emitter saturation voltage
  • 4 A continuous collector current
  • Up to 15 A peak current
  • High efficiency due to less heat generation
应用
  • Power management functions
  • Charging circuits
  • DC-to-DC conversion
  • MOSFET gate driving
  • Power switches (e.g. motors, fans)
  • Thin Film Transistor (TFT) backlight inverter
产品实物图
PBSS301ND 产品实物图
封装
型号 可订购的器件编号 订购码 (12NC) 产品状态 封装
PBSS301ND PBSS301ND,115 9340 591 28115 量产 SOT457 (TSOP6)
外形图
封装版本 封装名称 封装说明
SOT457 TSOP6 plastic surface-mounted package (TSOP6); 6 leads
订货和供应
型号 订购码 (12NC) 可订购的器件编号 化学成分
PBSS301ND PBSS301ND,115 9340 591 28115 PBSS301ND
PBSS301ND 技术支持
档案名称 标题 类型 格式
PBSS301ND 20 V, 4 A NPN low VCesat (BISS) transistor Data sheet pdf
AN11045 Next generation of NXP low VCEsat transistors: improved technology for discrete semiconductors Application note pdf
AN11076 Thermal behavior of small-signal discretes on multilayer PCBs Application note pdf
LSYMTRA Letter Symbols - Transistors; General Other type pdf
75017090 Application guide; Portable devices and mobile handsets Selection guide pdf
75016734 Downsize the footprint, boost the performance; NXP ultra-small diodes and transistors for portable applications Leaflet pdf