PBSS306PZ 100 V, 4.1 A PNP low VCEsat (BISS) transistor

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS306NZ

产品特点 Features
  • Low collector-emitter saturation voltage VCEsat
  • High collector current capability IC and ICM
  • High collector current gain (hFE) at high IC
  • High efficiency due to less heat generation
  • Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
应用
  • High-voltage DC-to-DC conversion
  • High-voltage MOSFET gate driving
  • High-voltage motor control
  • High-voltage power switches (e.g. motors, fans)
  • Automotive applications
产品实物图
PBSS306PZ 产品实物图
封装
型号 可订购的器件编号 订购码 (12NC) 产品状态 封装
PBSS306PZ PBSS306PZ,115 9340 590 54135 量产 SOT223 (SC-73)
外形图
封装版本 封装名称 封装说明
SOT223 SC-73 plastic surface-mounted package with increased heatsink; 4 leads
订货和供应
型号 订购码 (12NC) 可订购的器件编号 化学成分
PBSS306PZ PBSS306PZ,115 9340 590 54135 PBSS306PZ
PBSS306PZ 技术支持
档案名称 标题 类型 格式
PBSS306PZ 100 V, 4.1 A PNP low VCEsat (BISS) transistor Data sheet pdf
AN11045 Next generation of NXP low VCEsat transistors: improved technology for discrete semiconductors Application note pdf
AN11076 Thermal behavior of small-signal discretes on multilayer PCBs Application note pdf
LSYMTRA Letter Symbols - Transistors; General Other type pdf
75017090 Application guide; Portable devices and mobile handsets Selection guide pdf
75016734 Downsize the footprint, boost the performance; NXP ultra-small diodes and transistors for portable applications Leaflet pdf