PBSS3515MB 15 V low VCEsat PNP double transistor

PNP low VCEsat double transistor in a SOT666 plastic package.

NPN complement: PBSS2515VS

产品特点 Features
  • 300 mW total power dissipation
  • Very small 1.6 x 1.2 mm ultra thin package
  • Self alignment during soldering due to straight leads
  • Low collector-emitter saturation voltage
  • High current capability
  • Improved thermal behaviour due to flat leads
  • Replaces two SC75/SC89 packaged low VCEsat transistors on same PCB area
  • Reduces required PCB area
  • Reduced pick and place costs
应用
  • General purpose switching and muting
  • Low frequency driver circuits
  • LCD backlighting
  • Audio frequency general purpose amplifier applications
  • Battery driven equipment (mobile phones, video cameras and hand-held devices).
产品实物图
PBSS3515MB 产品实物图
封装
型号 可订购的器件编号 订购码 (12NC) 产品状态 封装
PBSS3515MB PBSS3515MB,115 9340 567 67115 量产 SOT666
外形图
封装版本 封装名称 封装说明
SOT666 SOT666 plastic surface-mounted package; 6 leads
订货和供应
型号 订购码 (12NC) 可订购的器件编号 化学成分
PBSS3515MB PBSS3515MB,115 9340 567 67115 PBSS3515MB
PBSS3515MB 技术支持
档案名称 标题 类型 格式
PBSS3515MB 15 V low VCEsat PNP double transistor Data sheet pdf
AN11045 Next generation of NXP low VCEsat transistors: improved technology for discrete semiconductors Application note pdf
AN11076 Thermal behavior of small-signal discretes on multilayer PCBs Application note pdf
LSYMTRA Letter Symbols - Transistors; General Other type pdf
75017090 Application guide; Portable devices and mobile handsets Selection guide pdf
75016734 Downsize the footprint, boost the performance; NXP ultra-small diodes and transistors for portable applications Leaflet pdf