PBSS3540M 40 V, 0.5 A PNP low VCEsat (BISS) transistor

Low VCEsat PNP transistor in a SOT883 leadless ultra small plastic package. NPN complement: PBSS2540M

产品特点 Features
  • Low collector-emitter saturation voltage VCEsat
  • High collector current capability IC and ICM
  • High efficiency leading to reduced heat generation
  • Reduced printed-circuit board requirements.
应用
  • Power management:
    • DC-DC converter
    • Supply line switching
    • Battery charger
    • LCD backlighting.
  • Peripheral driver:
    • Driver in low supply voltage applications (e.g. lamps and LEDs).
    • Inductive load drivers (e.g. relays, buzzers and motors).
产品实物图
PBSS3540M 产品实物图
封装
型号 可订购的器件编号 订购码 (12NC) 产品状态 封装
PBSS3540M PBSS3540M,315 9340 571 55315 量产 SOT883 (DFN1006-3)
外形图
封装版本 封装名称 封装说明
SOT883 DFN1006-3 leadless ultra small plastic package; 3 solder lands
订货和供应
型号 订购码 (12NC) 可订购的器件编号 化学成分
PBSS3540M PBSS3540M,315 9340 571 55315 PBSS3540M
PBSS3540M 技术支持
档案名称 标题 类型 格式
PBSS3540M 40 V, 0.5 A PNP low VCEsat (BISS) transistor Data sheet pdf
AN11045 Next generation of NXP low VCEsat transistors: improved technology for discrete semiconductors Application note pdf
AN11076 Thermal behavior of small-signal discretes on multilayer PCBs Application note pdf
LSYMTRA Letter Symbols - Transistors; General Other type pdf
75017090 Application guide; Portable devices and mobile handsets Selection guide pdf
75016734 Downsize the footprint, boost the performance; NXP ultra-small diodes and transistors for portable applications Leaflet pdf