PBSS4032NT 30 V, 2.6 A NPN low VCEsat (BISS) transistor
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS4032PT
产品特点 Features
- Low collector-emitter saturation voltage VCEsat
- Optimized switching time
- High collector current capability IC and ICM
- High collector current gain (hFE) at high IC
- High energy efficiency due to less heat generation
- AEC-Q101 qualified
- Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
|
应用
- DC-to-DC conversion
- Battery-driven devices
- Power management
- Charging circuits
产品实物图
 |
封装
| 型号 |
可订购的器件编号 |
订购码 (12NC) |
产品状态 |
封装 |
| PBSS4032NT |
PBSS4032NT,215 |
9340 627 65215 |
量产 |
SOT23
(TO-236AB) |
外形图
| 封装版本 |
封装名称 |
封装说明 |
| SOT23 |
TO-236AB |
plastic surface-mounted package; 3 leads |
订货和供应
| 型号 |
订购码 (12NC) |
可订购的器件编号 |
化学成分 |
| PBSS4032NT |
PBSS4032NT,215 |
9340 627 65215 |
PBSS4032NT |
PBSS4032NT 技术支持
| 档案名称 |
标题 |
类型 |
格式 |
| PBSS4032NT |
30 V, 2.6 A NPN low V_CEsat (BISS) transistor |
Data sheet |
pdf |
| AN10909 |
Low VCEsat transistors in medium power loadswitch applications |
Application note |
pdf |
| AN11045 |
Next generation of NXP low VCEsat transistors: improved technology for discrete semiconductors |
Application note |
pdf |
| AN11076 |
Thermal behavior of small-signal discretes on multilayer PCBs |
Application note |
pdf |
| LSYMTRA |
Letter Symbols - Transistors; General |
Other type |
pdf |
| 75017090 |
Application guide; Portable devices and mobile handsets |
Selection guide |
pdf |
| 75016734 |
Downsize the footprint, boost the performance; NXP ultra-small diodes and transistors for portable applications |
Leaflet |
pdf |
