PBSS4032PD 30 V, 2.7 A PNP low VCEsat (BISS) transistor

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 Surface-Mounted Device (SMD) plastic package

产品特点 Features
  • AEC-Q101 qualified
  • Energy saving due to less heat generation
  • High collector current capability IC and ICM
  • High collector current gain (hFE) at high IC
  • Low collector-emitter saturation voltage VCEsat
  • Smaller required PCB area than for conventional transistors
  • Switching time optimized
应用
  • Battery-driven devices
  • Charging circuits
  • DC-to-DC conversion
  • Power management
产品实物图
PBSS4032PD 产品实物图
封装
型号 可订购的器件编号 订购码 (12NC) 产品状态 封装
PBSS4032PD PBSS4032PD,115 9340 634 01115 量产 SOT457 (TSOP6)
外形图
封装版本 封装名称 封装说明
SOT457 TSOP6 plastic surface-mounted package (TSOP6); 6 leads
订货和供应
型号 订购码 (12NC) 可订购的器件编号 化学成分
PBSS4032PD PBSS4032PD,115 9340 634 01115 PBSS4032PD
PBSS4032PD 技术支持
档案名称 标题 类型 格式
PBSS4032PD 30 V, 2.7 A PNP low V_CEsat (BISS) transistor Data sheet pdf
AN10909 Low VCEsat transistors in medium power loadswitch applications Application note pdf
AN11045 Next generation of NXP low VCEsat transistors: improved technology for discrete semiconductors Application note pdf
AN11076 Thermal behavior of small-signal discretes on multilayer PCBs Application note pdf
LSYMTRA Letter Symbols - Transistors; General Other type pdf
75017090 Application guide; Portable devices and mobile handsets Selection guide pdf
75016734 Downsize the footprint, boost the performance; NXP ultra-small diodes and transistors for portable applications Leaflet pdf