PBSS4041SN 60 V, 5.9 A PNP/PNP low VCEsat (BISS) transistor

PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package

产品特点 Features
  • Very low collector-emitter saturation voltage VCEsat
  • High collector current capability IC and ICM
  • High collector current gain (hFE) at high IC
  • High efficiency due to less heat generation
  • Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
应用
  • Loadswitch
  • Battery-driven devices
  • Power management
  • Charging circuits
  • Power switches (e.g. motors, fans)
产品实物图
PBSS4041SN 产品实物图
封装
型号 可订购的器件编号 订购码 (12NC) 产品状态 封装
PBSS4041SN PBSS4041SN,115 9340 634 13115 量产 SOT96-1 (SO8)
外形图
封装版本 封装名称 封装说明
SOT96-1 SO8 plastic small outline package; 8 leads; body width 3.9 mm
订货和供应
型号 订购码 (12NC) 可订购的器件编号 化学成分
PBSS4041SN PBSS4041SN,115 9340 634 13115 PBSS4041SN
PBSS4041SN 技术支持
档案名称 标题 类型 格式
PBSS4041SN 60 V, 5.9 A PNP/PNP low V_CEsat (BISS) transistor Data sheet pdf
AN11045 Next generation of NXP low VCEsat transistors: improved technology for discrete semiconductors Application note pdf
AN11076 Thermal behavior of small-signal discretes on multilayer PCBs Application note pdf
LSYMTRA Letter Symbols - Transistors; General Other type pdf
75017090 Application guide; Portable devices and mobile handsets Selection guide pdf
75016734 Downsize the footprint, boost the performance; NXP ultra-small diodes and transistors for portable applications Leaflet pdf