PBSS4140DPN 40 V low VCEsat NPN/PNP transistor

NPN/PNP low VCEsat transistor pair in an SC-74 (SOT457) plastic package

产品特点 Features
  • 600 mW total power dissipation
  • Low collector-emitter saturation voltage
  • High current capability
  • Improved device reliability due to reduced heat generation
  • Replaces two SOT23 packaged low VCEsat transistors on same PCB area
  • Reduces required PCB area
  • Reduced pick and place costs
应用
  • General purpose switching and muting
  • LCD backlighting
  • Supply line switching circuits
  • Battery driven equipment (mobile phones, video cameras and hand-held devices).
产品实物图
PBSS4140DPN 产品实物图
封装
型号 可订购的器件编号 订购码 (12NC) 产品状态 封装
PBSS4140DPN PBSS4140DPN,115 9340 566 60115 量产 SOT457 (TSOP6)
外形图
封装版本 封装名称 封装说明
SOT457 TSOP6 plastic surface-mounted package (TSOP6); 6 leads
订货和供应
型号 订购码 (12NC) 可订购的器件编号 化学成分
PBSS4140DPN PBSS4140DPN,115 9340 566 60115 PBSS4140DPN
PBSS4140DPN 技术支持
档案名称 标题 类型 格式
PBSS4140DPN 40 V low VCEsat NPN/PNP transistor Data sheet pdf
AN11045 Next generation of NXP low VCEsat transistors: improved technology for discrete semiconductors Application note pdf
AN11076 Thermal behavior of small-signal discretes on multilayer PCBs Application note pdf
LSYMTRA Letter Symbols - Transistors; General Other type pdf
75017090 Application guide; Portable devices and mobile handsets Selection guide pdf
75016734 Downsize the footprint, boost the performance; NXP ultra-small diodes and transistors for portable applications Leaflet pdf