PBSS4140V 40V Low VCEsat NPN Transistor

NPN low VCEsat transistor with high current capability in a SOT666 plastic package. PNP complement: PBSS5140V

产品特点 Features
  • 300 mW total power dissipation
  • Very small 1.6 mm x 1.2 mm x 0.55 mm ultra thin package
  • Improved thermal behaviour due to flat leads
  • Excellent coplanarity due to straight leads
  • Low collector-emitter saturation voltage
  • High current capabilities
  • Reduced required PCB area
应用
  • General purpose switching and muting
  • LCD backlighting
  • Supply line switching circuits
  • Battery driven equipment (mobile phones, video cameras and hand-held devices).
产品实物图
PBSS4140V 产品实物图
封装
型号 可订购的器件编号 订购码 (12NC) 产品状态 封装
PBSS4140V PBSS4140V,115 9340 565 08115 量产 SOT666
外形图
封装版本 封装名称 封装说明
SOT666 SOT666 plastic surface-mounted package; 6 leads
订货和供应
型号 订购码 (12NC) 可订购的器件编号 化学成分
PBSS4140V PBSS4140V,115 9340 565 08115 PBSS4140V
PBSS4140V 技术支持
档案名称 标题 类型 格式
PBSS4140V 40V Low VCEsat NPN Transistor Data sheet pdf
AN11045 Next generation of NXP low VCEsat transistors: improved technology for discrete semiconductors Application note pdf
AN11076 Thermal behavior of small-signal discretes on multilayer PCBs Application note pdf
LSYMTRA Letter Symbols - Transistors; General Other type pdf
75017090 Application guide; Portable devices and mobile handsets Selection guide pdf
75016734 Downsize the footprint, boost the performance; NXP ultra-small diodes and transistors for portable applications Leaflet pdf