PBSS4220V 20 V, 2 A NPN low VCEsat (BISS) transistor

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT666 Surface Mounted Device (SMD) plastic package.

PNP complement: PBSS5220V

产品特点 Features
  • Low collector-emitter saturation voltage VCEsat
  • High collector current capability: IC and ICM
  • High collector current gain (hFE) at high IC
  • High efficiency due to less heat generation
  • Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
应用
  • DC-to-DC conversion
  • MOSFET gate driving
  • Motor control
  • Charging circuits
  • Low power switches (e.g. motors, fans)
  • Portable applications
产品实物图
PBSS4220V 产品实物图
封装
型号 可订购的器件编号 订购码 (12NC) 产品状态 封装
PBSS4220V PBSS4220V,115 9340 592 59115 量产 SOT666
外形图
封装版本 封装名称 封装说明
SOT666 SOT666 plastic surface-mounted package; 6 leads
订货和供应
型号 订购码 (12NC) 可订购的器件编号 化学成分
PBSS4220V PBSS4220V,115 9340 592 59115 PBSS4220V
PBSS4220V 技术支持
档案名称 标题 类型 格式
PBSS4220V 20 V, 2 A NPN low VCEsat (BISS) transistor Data sheet pdf
AN10909 Low VCEsat transistors in medium power loadswitch applications Application note pdf
AN11045 Next generation of NXP low VCEsat transistors: improved technology for discrete semiconductors Application note pdf
AN11076 Thermal behavior of small-signal discretes on multilayer PCBs Application note pdf
LSYMTRA Letter Symbols - Transistors; General Other type pdf
75017090 Application guide; Portable devices and mobile handsets Selection guide pdf
75016734 Downsize the footprint, boost the performance; NXP ultra-small diodes and transistors for portable applications Leaflet pdf