PBSS4230T 30 V; 2 A NPN low VCEsat (BISS) transistor

NPN BISS transistor in a SOT23 plastic package providing ultra low VCEsat and RCEsat parameters. PNP complement: PBSS5230T

产品特点 Features
  • Low collector-emitter saturation voltage VCEsat
  • High collector current capability IC and ICM
  • High efficiency leading to less heat generation
  • Reduced printed-circuit board requirements
  • Cost effective alternative to MOSFETs in specific applications
应用
  • Power management
    • DC/DC conversion
    • Supply line switching
    • Battery charger
    • LCD backlighting.
  • Peripheral driver
    • Driver in low supply voltage applications (e.g. lamps and LEDs)
    • Inductive load drivers (e.g. relays, buzzers and motors).
产品实物图
PBSS4230T 产品实物图
封装
型号 可订购的器件编号 订购码 (12NC) 产品状态 封装
PBSS4230T PBSS4230T,215 9340 579 86215 量产 SOT23 (TO-236AB)
外形图
封装版本 封装名称 封装说明
SOT23 TO-236AB plastic surface-mounted package; 3 leads
订货和供应
型号 订购码 (12NC) 可订购的器件编号 化学成分
PBSS4230T PBSS4230T,215 9340 579 86215 PBSS4230T
PBSS4230T 技术支持
档案名称 标题 类型 格式
PBSS4230T 30 V; 2 A NPN low VCEsat (BISS) transistor Data sheet pdf
AN10909 Low VCEsat transistors in medium power loadswitch applications Application note pdf
AN11045 Next generation of NXP low VCEsat transistors: improved technology for discrete semiconductors Application note pdf
AN11076 Thermal behavior of small-signal discretes on multilayer PCBs Application note pdf
LSYMTRA Letter Symbols - Transistors; General Other type pdf
75017090 Application guide; Portable devices and mobile handsets Selection guide pdf
75016734 Downsize the footprint, boost the performance; NXP ultra-small diodes and transistors for portable applications Leaflet pdf