PBSS4240V 40 V low VCEsat NPN transistor

NPN transistor providing low VCEsat and high current capability in a SOT666 plastic package. PNP complement: PBSS5240V

产品特点 Features
  • Low collector-emitter saturation voltage VCEsat
  • High collector current capability IC and ICM
  • High collector current gain (hFE ) at high IC
  • High efficiency leading to reduced heat generation
  • Reduced printed-circuit board area requirements
应用
  • Power management:
    • DC-DC converter
    • Supply line switching
    • Battery charger
    • LCD back lighting.
  • Peripheral driver:
    • Driver in low supply voltage applications (e.g. lamps and LEDs)
    • Inductive load drivers (e.g. relay, buzzers and motors).
产品实物图
PBSS4240V 产品实物图
封装
型号 可订购的器件编号 订购码 (12NC) 产品状态 封装
PBSS4240V PBSS4240V,115 9340 570 74115 量产 SOT666
外形图
封装版本 封装名称 封装说明
SOT666 SOT666 plastic surface-mounted package; 6 leads
订货和供应
型号 订购码 (12NC) 可订购的器件编号 化学成分
PBSS4240V PBSS4240V,115 9340 570 74115 PBSS4240V
PBSS4240V 技术支持
档案名称 标题 类型 格式
PBSS4240V 40 V low VCEsat NPN transistor Data sheet pdf
AN10909 Low VCEsat transistors in medium power loadswitch applications Application note pdf
AN11045 Next generation of NXP low VCEsat transistors: improved technology for discrete semiconductors Application note pdf
AN11076 Thermal behavior of small-signal discretes on multilayer PCBs Application note pdf
LSYMTRA Letter Symbols - Transistors; General Other type pdf
75017090 Application guide; Portable devices and mobile handsets Selection guide pdf
75016734 Downsize the footprint, boost the performance; NXP ultra-small diodes and transistors for portable applications Leaflet pdf