PBSS5160PAP 60 V, 2 A NPN/NPN low VCEsat (BISS) transistor

PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.

NPN/PNP complement: PBSS4160PANP. NPN/NPN complement: PBSS4160PAN

产品特点 Features
  • Very low collector-emitter saturation voltage VCEsat
  • High collector current capability IC and ICM
  • High collector current gain hFE at high IC
  • Reduced Printed-Circuit Board (PCB) requirements
  • High energy efficiency due to less heat generation
  • AEC-Q101 qualified
应用
  • Load switch
  • Battery-driven devices
  • Power management
  • Charging circuits
  • Power switches (e.g. motors, fans)
产品实物图
PBSS5160PAP 产品实物图
封装
型号 可订购的器件编号 订购码 (12NC) 产品状态 封装
PBSS5160PAP PBSS5160PAP,115 9340 668 87115 量产 SOT1118 (DFN2020-6)
外形图
封装版本 封装名称 封装说明
SOT1118 DFN2020-6 plastic thermal enhanced ultra thin small outline package; no leads; 6 terminals; body 2 x 2 x 0.65 mm
订货和供应
型号 订购码 (12NC) 可订购的器件编号 化学成分
PBSS5160PAP PBSS5160PAP,115 9340 668 87115 PBSS5160PAP
PBSS5160PAP 技术支持
档案名称 标题 类型 格式
PBSS5160PAP 60 V, 1 A PNP/PNP low VCEsat (BISS) transistor Data sheet pdf
75017064 Bipolar Power Product Selection Guide Selection guide pdf