PBSS5160T 60 V, 1 A PNP low VCEsat (BISS) transistor
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS4160T
产品特点 Features
- Low collector-emitter saturation voltage VCEsat
- High collector current capability IC and ICM
- High efficiency due to less heat generation
- Reduces Printed-Circuit Board (PCB) area required
- Cost-effective replacement for medium power transistors BCP52 and BCX52
|
应用
- Major application segments:
- Automotive
- Telecom infrastructure
- Industrial
- Power management:
- JDC-to-DC conversion
- Supply line switching
- Peripheral driver:
- Driver in low supply voltage applications (e.g. lamps and LEDs)
- Inductive load drivers (e.g. relays, buzzers and motors)
产品实物图
 |
封装
| 型号 |
可订购的器件编号 |
订购码 (12NC) |
产品状态 |
封装 |
| PBSS5160T |
PBSS5160T,215 |
9340 576 68215 |
量产 |
SOT23
(TO-236AB) |
外形图
| 封装版本 |
封装名称 |
封装说明 |
| SOT23 |
TO-236AB |
plastic surface-mounted package; 3 leads |
订货和供应
| 型号 |
订购码 (12NC) |
可订购的器件编号 |
化学成分 |
| PBSS5160T |
PBSS5160T,215 |
9340 576 68215 |
PBSS5160T |
PBSS5160T 技术支持
| 档案名称 |
标题 |
类型 |
格式 |
| PBSS5160T |
60 V, 1 A PNP low VCEsat (BISS) transistor |
Data sheet |
pdf |
| AN10909 |
Low VCEsat transistors in medium power loadswitch applications |
Application note |
pdf |
| AN11045 |
Next generation of NXP low VCEsat transistors: improved technology for discrete semiconductors |
Application note |
pdf |
| AN11076 |
Thermal behavior of small-signal discretes on multilayer PCBs |
Application note |
pdf |
| LSYMTRA |
Letter Symbols - Transistors; General |
Other type |
pdf |
| 75017090 |
Application guide; Portable devices and mobile handsets |
Selection guide |
pdf |
| 75016734 |
Downsize the footprint, boost the performance; NXP ultra-small diodes and transistors for portable applications |
Leaflet |
pdf |
