PBSS5230T 30 V; 2 A PNP low VCEsat (BISS) transistor

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4230T

产品特点 Features
  • Low collector-emitter saturation voltage VCEsat
  • High collector current capability: IC and ICM
  • Higher efficiency leading to less heat generation
  • Reduced printed-circuit board (PCB) requirements
  • AEC-Q101 qualified
应用
  • DC-to-DC conversion
  • Supply line switching
  • Battery charger
  • LCD backlighting
  • Driver in low supply voltage applications (e.g. lamps and LEDs)
  • Inductive load driver (e.g. relays, buzzers and motors)
产品实物图
PBSS5230T 产品实物图
封装
型号 可订购的器件编号 订购码 (12NC) 产品状态 封装
PBSS5230T PBSS5230T,215 9340 579 91215 量产 SOT23 (TO-236AB)
外形图
封装版本 封装名称 封装说明
SOT23 TO-236AB plastic surface-mounted package; 3 leads
订货和供应
型号 订购码 (12NC) 可订购的器件编号 化学成分
PBSS5230T PBSS5230T,215 9340 579 91215 PBSS5230T
PBSS5230T 技术支持
档案名称 标题 类型 格式
PBSS5230T 30 V, 2 A PNP low VCEsat (BISS) transistor Data sheet pdf
AN10909 Low VCEsat transistors in medium power loadswitch applications Application note pdf
AN11045 Next generation of NXP low VCEsat transistors: improved technology for discrete semiconductors Application note pdf
AN11076 Thermal behavior of small-signal discretes on multilayer PCBs Application note pdf
LSYMTRA Letter Symbols - Transistors; General Other type pdf
75017090 Application guide; Portable devices and mobile handsets Selection guide pdf
75016734 Downsize the footprint, boost the performance; NXP ultra-small diodes and transistors for portable applications Leaflet pdf