PBSS5240T 40 V, 2 A PNP low VCEsat (BISS) transistor

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4230T

产品特点 Features
  • Low collector-emitter saturation voltage
  • High current capability
  • Improved device reliability due to reduced heat generation
  • Replacement for SOT89/SOT223 standard packaged transistor
应用
  • Supply line switching circuits
  • Battery management applications
  • DC/DC converter applications
  • Strobe flash units
  • Heavy duty battery powered equipment (motor and lamp drivers).
产品实物图
PBSS5240T 产品实物图
封装
型号 可订购的器件编号 订购码 (12NC) 产品状态 封装
PBSS5240T PBSS5240T,215 9340 566 07215 量产 SOT23 (TO-236AB)
外形图
封装版本 封装名称 封装说明
SOT23 TO-236AB plastic surface-mounted package; 3 leads
订货和供应
型号 订购码 (12NC) 可订购的器件编号 化学成分
PBSS5240T PBSS5240T,215 9340 566 07215 PBSS5240T
PBSS5240T 技术支持
档案名称 标题 类型 格式
PBSS5240T 40 V, 2 A PNP low VCEsat (BISS) transistor Data sheet pdf
AN10909 Low VCEsat transistors in medium power loadswitch applications Application note pdf
AN11045 Next generation of NXP low VCEsat transistors: improved technology for discrete semiconductors Application note pdf
AN11076 Thermal behavior of small-signal discretes on multilayer PCBs Application note pdf
LSYMTRA Letter Symbols - Transistors; General Other type pdf
75017090 Application guide; Portable devices and mobile handsets Selection guide pdf
75016734 Downsize the footprint, boost the performance; NXP ultra-small diodes and transistors for portable applications Leaflet pdf