PBSS5240V 40 V low VCEsat PNP transistor

PNP transistor providing low VCEsat and high current capability in a SOT666 plastic package. NPN complement: PBSS4240V

产品特点 Features
  • Low collector-emitter saturation voltage VCEsat
  • High collector current capability IC and ICM
  • High collector current gain (hFE ) at high IC
  • High efficiency leading to reduced heat generation
  • Reduced printed-circuit board area requirements
应用
  • Power management
    • DC/DC converters
    • Supply line switching
    • Battery charger
    • LCD backlighting.
  • Peripheral drivers
    • Driver in low supply voltage applications (e.g. lamps and LEDs).
    • Inductive load driver (e.g. relays, buzzers and motors).
产品实物图
PBSS5240V 产品实物图
封装
型号 可订购的器件编号 订购码 (12NC) 产品状态 封装
PBSS5240V PBSS5240V,115 9340 570 73115 量产 SOT666
外形图
封装版本 封装名称 封装说明
SOT666 SOT666 plastic surface-mounted package; 6 leads
订货和供应
型号 订购码 (12NC) 可订购的器件编号 化学成分
PBSS5240V PBSS5240V,115 9340 570 73115 PBSS5240V
PBSS5240V 技术支持
档案名称 标题 类型 格式
PBSS5240V 40 V low VCEsat PNP transistor Data sheet pdf
AN10909 Low VCEsat transistors in medium power loadswitch applications Application note pdf
AN11045 Next generation of NXP low VCEsat transistors: improved technology for discrete semiconductors Application note pdf
AN11076 Thermal behavior of small-signal discretes on multilayer PCBs Application note pdf
LSYMTRA Letter Symbols - Transistors; General Other type pdf
75017090 Application guide; Portable devices and mobile handsets Selection guide pdf
75016734 Downsize the footprint, boost the performance; NXP ultra-small diodes and transistors for portable applications Leaflet pdf