PBSS5330PA 30 V, 3 A PNP low VCEsat (BISS) transistor

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability.

NPN complement: PBSS4330PA

产品特点 Features
  • Low collector-emitter saturation voltage VCEsat
  • High collector current capability IC and ICM
  • Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
  • Exposed heat sink for excellent thermal and electrical conductivity
  • Leadless small SMD plastic package with medium power capability
应用
  • Loadswitch
  • Battery-driven devices
  • Power management
  • Charging circuits
  • Power switches (e.g. motors, fans)
产品实物图
PBSS5330PA 产品实物图
封装
型号 可订购的器件编号 订购码 (12NC) 产品状态 封装
PBSS5330PA PBSS5330PA,115 9340 642 73115 量产 SOT1061 (DFN2020-3)
外形图
封装版本 封装名称 封装说明
SOT1061 DFN2020-3 plastic thermal enhanced ultra thin small outline package; no leads; 3 terminals; body 2 x 2 x 0.65 mm
订货和供应
型号 订购码 (12NC) 可订购的器件编号 化学成分
PBSS5330PA PBSS5330PA,115 9340 642 73115 PBSS5330PA
PBSS5330PA 技术支持
档案名称 标题 类型 格式
PBSS5330PA 30 V, 3 A PNP low VCEsat (BISS) transistor Data sheet pdf
AN10909 Low VCEsat transistors in medium power loadswitch applications Application note pdf
AN11045 Next generation of NXP low VCEsat transistors: improved technology for discrete semiconductors Application note pdf
AN11076 Thermal behavior of small-signal discretes on multilayer PCBs Application note pdf
LSYMTRA Letter Symbols - Transistors; General Other type pdf
75017090 Application guide; Portable devices and mobile handsets Selection guide pdf
75016734 Downsize the footprint, boost the performance; NXP ultra-small diodes and transistors for portable applications Leaflet pdf