PBSS5350D 50 V, 3 A PNP low VCEsat (BISS) transistor
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4350D
产品特点 Features
- Low collector-emitter saturation voltage VCEsat
- High current capability
- High efficiency due to less heat generation
- AEC-Q101 qualified
- Smaller Printed-Circuit Board (PCB) area than for conventional transistors
|
应用
- Supply line switching circuits
- Battery management applications
- DC-to-DC conversion
产品实物图
 |
封装
| 型号 |
可订购的器件编号 |
订购码 (12NC) |
产品状态 |
封装 |
| PBSS5350D |
PBSS5350D,115 |
9340 559 46115 |
量产 |
SOT457
(TSOP6) |
| PBSS5350D |
PBSS5350D,135 |
9340 559 46135 |
量产 |
SOT457
(TSOP6) |
| PBSS5350D |
PBSS5350D,125 |
9340 559 46125 |
量产 |
SOT457
(TSOP6) |
外形图
| 封装版本 |
封装名称 |
封装说明 |
| SOT457 |
TSOP6 |
plastic surface-mounted package (TSOP6); 6 leads |
订货和供应
| 型号 |
订购码 (12NC) |
可订购的器件编号 |
化学成分 |
| PBSS5350D |
PBSS5350D,115 |
9340 559 46115 |
PBSS5350D |
| PBSS5350D |
PBSS5350D,135 |
9340 559 46135 |
PBSS5350D |
| PBSS5350D |
PBSS5350D,125 |
9340 559 46125 |
PBSS5350D |
PBSS5350D 技术支持
| 档案名称 |
标题 |
类型 |
格式 |
| PBSS5350D |
50 V, 3 A PNP low VCEsat (BISS) transistor |
Data sheet |
pdf |
| AN10909 |
Low VCEsat transistors in medium power loadswitch applications |
Application note |
pdf |
| AN11045 |
Next generation of NXP low VCEsat transistors: improved technology for discrete semiconductors |
Application note |
pdf |
| AN11076 |
Thermal behavior of small-signal discretes on multilayer PCBs |
Application note |
pdf |
| LSYMTRA |
Letter Symbols - Transistors; General |
Other type |
pdf |
| 75017090 |
Application guide; Portable devices and mobile handsets |
Selection guide |
pdf |
| 75016734 |
Downsize the footprint, boost the performance; NXP ultra-small diodes and transistors for portable applications |
Leaflet |
pdf |
