PBSS5350T 50 V, 3 A PNP low VCEsat (BISS) transistor

PNP low VCEsat transistor in a SOT23 plastic package. NPN complement: PBSS4350T

产品特点 Features
  • Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat
  • High collector current capability
  • High collector current gain
  • Improved efficiency due to reduced heat generation
应用
  • Power management applications
  • Low and medium power DC/DC convertors
  • Supply line switching
  • Battery chargers
  • Linear voltage regulation with low voltage drop-out (LDO).
产品实物图
PBSS5350T 产品实物图
封装
型号 可订购的器件编号 订购码 (12NC) 产品状态 封装
PBSS5350T PBSS5350T,215 9340 566 05215 量产 SOT23 (TO-236AB)
外形图
封装版本 封装名称 封装说明
SOT23 TO-236AB plastic surface-mounted package; 3 leads
订货和供应
型号 订购码 (12NC) 可订购的器件编号 化学成分
PBSS5350T PBSS5350T,215 9340 566 05215 PBSS5350T
PBSS5350T 技术支持
档案名称 标题 类型 格式
PBSS5350T 50 V, 3 A PNP low VCEsat (BISS) transistor Data sheet pdf
AN10909 Low VCEsat transistors in medium power loadswitch applications Application note pdf
AN11045 Next generation of NXP low VCEsat transistors: improved technology for discrete semiconductors Application note pdf
AN11076 Thermal behavior of small-signal discretes on multilayer PCBs Application note pdf
LSYMTRA Letter Symbols - Transistors; General Other type pdf
75017090 Application guide; Portable devices and mobile handsets Selection guide pdf
75016734 Downsize the footprint, boost the performance; NXP ultra-small diodes and transistors for portable applications Leaflet pdf