PBSS9110X 100 V, 1 A PNP low VCEsat (BISS) transistor

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/ TO-243) SMD plastic package.

NPN complement: PBSS8110X

产品特点 Features
  • SOT89 package
  • Low collector-emitter saturation voltage VCEsat
  • High collector current capability IC and ICM
  • High efficiency leading to less heat generation
应用
  • Major application segments:
  • Automotive 42 V power
  • Telecom infrastructure
  • Industrial
  • Peripheral driver:
  • Driver in low supply voltage applications (e.g. lamps and LEDs)
  • Inductive load driver (e.g. relays, buzzers and motors)
  • DC-to-DC conversion
产品实物图
PBSS9110X 产品实物图
封装
型号 可订购的器件编号 订购码 (12NC) 产品状态 封装
PBSS9110X PBSS9110X,135 9340 579 76135 量产 SOT89
外形图
封装版本 封装名称 封装说明
SOT89 SOT89 plastic surface-mounted package; die pad for good heat transfer; 3 leads
订货和供应
型号 订购码 (12NC) 可订购的器件编号 化学成分
PBSS9110X PBSS9110X,135 9340 579 76135 PBSS9110X
PBSS9110X 技术支持
档案名称 标题 类型 格式
PBSS9110X 100 V, 1 A PNP low VCEsat (BISS) transistor Data sheet pdf
AN10909 Low VCEsat transistors in medium power loadswitch applications Application note pdf
AN11045 Next generation of NXP low VCEsat transistors: improved technology for discrete semiconductors Application note pdf
AN11076 Thermal behavior of small-signal discretes on multilayer PCBs Application note pdf
LSYMTRA Letter Symbols - Transistors; General Other type pdf
75017090 Application guide; Portable devices and mobile handsets Selection guide pdf
75016734 Downsize the footprint, boost the performance; NXP ultra-small diodes and transistors for portable applications Leaflet pdf