PMBTA45 500 V, 150 mA NPN high-voltage low V_CEsat (BISS) transistor

NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9050T

产品特点 Features
  • High voltage
  • Low collector-emitter saturation voltage VCEsat
  • High collector current capability IC and ICM
  • High collector current gain (hFE) at high IC
  • AEC-Q101 qualified
应用
  • Electronic ballasts
  • LED driver for LED chain module
  • LCD backlighting
  • Automotive motor management
  • Flyback converters
  • Hook switch for wired telecom
  • Switch Mode Power Supply (SMPS)
产品实物图
PMBTA45 产品实物图
封装
型号 可订购的器件编号 订购码 (12NC) 产品状态 封装
PMBTA45 PMBTA45,215 9340 636 06215 量产 SOT23 (TO-236AB)
外形图
封装版本 封装名称 封装说明
SOT23 TO-236AB plastic surface-mounted package; 3 leads
订货和供应
型号 订购码 (12NC) 可订购的器件编号 化学成分
PMBTA45 PMBTA45,215 9340 636 06215 PMBTA45
PMBTA45 技术支持
档案名称 标题 类型 格式
PMBTA45 500 V, 150 mA NPN high-voltage low V_CEsat (BISS) transistor Data sheet pdf
AN10909 Low VCEsat transistors in medium power loadswitch applications Application note pdf
AN11045 Next generation of NXP low VCEsat transistors: improved technology for discrete semiconductors Application note pdf
AN11076 Thermal behavior of small-signal discretes on multilayer PCBs Application note pdf
LSYMTRA Letter Symbols - Transistors; General Other type pdf
75017090 Application guide; Portable devices and mobile handsets Selection guide pdf
75016734 Downsize the footprint, boost the performance; NXP ultra-small diodes and transistors for portable applications Leaflet pdf