PMEG6010AED Low VF (MEGA) Schottky barrier diode
Planar Schottky barrier diode encapsulated in a SOT457 (SC-74) small plastic package
产品特点 Features
- Low switching losses
- Very high surge current absorption capability
- Fast recovery time
- Guard ring protected
- Plastic SMD package
|
应用
- Low power switched-mode power supplies
- Rectification
- Polarity protection
产品实物图
 |
封装
| 型号 |
可订购的器件编号 |
订购码 (12NC) |
产品状态 |
封装 |
| PMEG6010AED |
PMEG6010AED,115 |
9340 577 81115 |
量产 |
SOT457
(TSOP6) |
外形图
| 封装版本 |
封装名称 |
封装说明 |
| SOT457 |
TSOP6 |
plastic surface-mounted package (TSOP6); 6 leads |
订货和供应
| 型号 |
订购码 (12NC) |
可订购的器件编号 |
化学成分 |
| PMEG6010AED |
PMEG6010AED,115 |
9340 577 81115 |
PMEG6010AED |
PMEG6010AED 技术支持
| 档案名称 |
标题 |
类型 |
格式 |
| PMEG6010AED |
Low VF (MEGA) Schottky barrier diode |
Data sheet |
pdf |
| AN10808 |
Thermal consideration of NXP FlatPower MEGA Schottky barrier rectifiers - Selection criteria |
Application note |
pdf |
| AN10117 |
Medium Power Transistors and Rectifiers for Power Management Applications |
Application note |
pdf |
| 75016734 |
Downsize the footprint, boost the performance; NXP ultra-small diodes and transistors for portable applications |
Leaflet |
pdf |
| 75017347 |
Enabling the Mobile Experience |
Brochure |
pdf |
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