2N5883 25 A, 60 V PNP Bipolar Power Transistor

The Power 25A 80 V Bipolar NPN Transistor is designed for general-purpose power amplifier and switching applications.

应用
  • Low-frequency Amplifi er, muting circuit
技术特性
  • Low Collector-Emitter Saturation Voltage VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc
  • Low Leakage Current ICEX = 1.0 mAdc (max) at Rated Voltage
  • Excellent DC Current Gain hFE = 20 (min) at IC = 10 Adc
  • High Current Gain Bandwidth Product ft = 4.0 MHz (min) at IC = 1.0 Adc
  • Pb-Free Packages are Available
封装图 PACKAGE DIMENSIONS

2N5883封装图

订购信息 Ordering Information
产品 状况 Compliance 具体说明 封装 MSL* 容器 预算价格 (1千个数量的单价)
类型 外形 类型 数量
2N5883G Active
Pb-free
25 A, 60 V PNP Bipolar Power Transistor TO-204-2 1-07 Tray Foam 100 $1.944
数据资料DataSheet下载
概述 文档编号/大小 版本
25 A, 60 V PNP Bipolar Power Transistor 2N5883-D(417.0kB) 1