2N6036:4.0 A, 80 V PNP Darlington Bipolar Power Transistor

The Power 4 A, 80 V NPN Darlington Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications.

技术特性
  • High DC Current Gain -
    hFE = 2000 (Typ) @ IC = 2.0 Adc
    Collector-Emitter Sustaining Voltage - @ 100 mAdc
    VCEO(sus) = 60 Vdc (Min) - 2N6036, 2N6038
    VCEO(sus) = 80 Vdc (Min) - 2N6036, 2N6039
  • Forward Biased Second Breakdown Current Capability
    IS/b = 1.5 Adc @ 25 Vdc
  • Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplication
  • Space-Saving High Performance-to-Cost Ratio TO-225AA Plastic Package
  • Pb-Free Packages are Available
封装图 PACKAGE DIMENSIONS

2N6036 封装图

订购信息 Ordering Information
产品 状况 Compliance 具体说明 封装 MSL* 容器 预算价格 (1千个数量的单价)
类型 外形 类型 数量
2N6036G Active
Pb-free
Halide free
4.0 A, 80 V PNP Darlington Bipolar Power Transistor TO-225-3 77-09   Bulk Box 500 $0.32
2N6036 Last Shipments  4.0 A, 80 V PNP Darlington Bipolar Power Transistor TO-225-3 77-09   Bulk Box 500  
概述 版本信息 大小
2N6036 数据资料DataSheet下载:pdf Rev.V2 2 页