BD810:High Power NPN Bipolar Power Transistor

The High Power NPN Bipolar Power Transistor is designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits.

技术特性
  • DC Current Gain - hFE = 30 (Min) @ IC = 2.0 Adc
  • Pb-Free Packages are Available
封装图 PACKAGE DIMENSIONS

BD810封装图

订购信息 Ordering Information
产品 状况 Compliance 具体说明 封装 MSL* 容器 预算价格 (1千个数量的单价)
类型 外形 类型 数量
BD810G Active
Pb-free
High Power PNP Bipolar Power Transistor TO-220-3 221A-09 Tube 50 $0.5933
BD810 Last Shipments High Power PNP Bipolar Power Transistor TO-220-3 221A-09 Tube 50  
数据资料DataSheet下载
概述 文档编号/大小 版本
High Power NPN Bipolar Power Transistor BD810-D(417.0kB) 3