BDV65B:10 A, 100 V PNP Darlington Bipolar Power Transistor
The 10 A, 100 V NPN Bipolar Power Transistor is for use as an output devices in complementary general purpose amplifier applications. The BDV65B (NPN) and BDV65B (PNP) are complementary devices.
技术特性
- High DC Current Gain HFE = 1000 (min.) @ 5 Adc
- Monolithic Construction with Built-in Base Emitter Shunt Resistors
- These devices are available in Pb-free package(s). Specifications herein apply to both standard and Pb-free devices. Please see our website at www.ON 安森美.com for specific Pb-free orderable part numbers, or contact your local ON Semiconductor sales office or representative
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封装图 PACKAGE DIMENSIONS
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订购信息 Ordering Information
| 产品 |
状况 |
Compliance |
具体说明 |
封装 |
MSL* |
容器 |
预算价格 (1千个数量的单价） |
| 类型 |
外形 |
类型 |
数量 |
| BDV65BG |
Active |
Pb-free |
10 A, 100 V PNP Darlington Bipolar Power Transistor |
TO-247-3 |
340L-02 |
|
Tube |
30 |
$0.9173 |
| BDV65B |
Active |
|
10 A, 100 V PNP Darlington Bipolar Power Transistor |
TO-247-3 |
340L-02 |
|
Tube |
30 |
$33.3325 |
数据资料DataSheet下载
