BUV21:40 A, 200V NPN Bipolar Power Transistor

The 40 A, 200 V NPN Bipolar Power Transistor is designed for high speed, high current and high power applications.

技术特性
  • High DC current gain: hFE min. = 20 at IC = 12 A
  • Low VCE(sat), VCE(sat) max. = 0.6 V at IC = 8 A
  • Very fast switching times: TF max. = 0.4 µs at IC=25A
  • Pb-Free Package is Available
封装图 PACKAGE DIMENSIONS

BUV21封装图

订购信息 Ordering Information
产品 状况 Compliance 具体说明 封装 MSL* 容器 预算价格 (1千个数量的单价)
类型 外形 类型 数量
BUV21G Active
Pb-free
40 A, 200V NPN Bipolar Power Transistor TO-204-2 / TO-3-2 197A-05 Tray Foam 100 $5.9759
数据资料DataSheet下载
概述 文档编号/大小 版本
40 A, 200V NPN Bipolar Power Transistor BUV21-D(417.0kB) 3