MBR40H100WT:40 A, 45 V Schottky Rectifier
The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier¿s state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact. It is ideally suited for use as rectifiers in low voltage, high frequency inverters, free wheeling diodes and polarity protection diodes.
技术特性
- Low Forward Voltage
- Low Power Loss/High Efficiency
- High Surge Capacity
- 175°C Operating Junction Temperature
- 40 A Total (20 A Per Diode Leg)
- This is a Pb−Free Device
Mechanical Characteristics:
- Case: Epoxy, Molded
- Epoxy Meets UL 94 V−0 @ 0.125 in
- Weight: 4.3 Grams (Approximately)
- Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
• Lead Temperature for Soldering Purposes:260°C Max. for 10 Seconds
|
应用
- Power Supply - Output Rectification
- Power Management
- Instrumentation
封装图 PACKAGE DIMENSIONS
|
订购信息 Ordering Information
| 产品 |
状况 |
Compliance |
具体说明 |
封装 |
MSL* |
容器 |
预算价格 (1千个数量的单价） |
| 类型 |
外形 |
类型 |
数量 |
| MBR40H100WTG |
Active |
|
100 V, 40 A H-Series Schottky Rectifier |
TO-247-3 |
340L-02 |
|
Tube |
30 |
$3.5999 |
数据资料DataSheet下载
