MBRA120ET3:20 V, 1.0 A Low Leakage Schottky Rectifier

The Schottky Rectifier employs the Schottky Barrier principle in a metal-to-silicon power rectifier. It features epitaxial construction with oxide passivation and metal overlay contact. It is ideally suited for low voltage, high frequency switching power supplies, free wheeling diodes and polarity protection diodes.

技术特性
  • Compact Package with J−Bend Leads Ideal for Automated Handling
  • Highly Stable Oxide Passivated Junction
  • Guardring for Over−Voltage Protection
  • Optimized for Low Leakage Current
  • These Devices are Pb−Free and are RoHS Compliant
    Mechanical Characteristics:
  • Case: Molded Epoxy
  • Epoxy Meets UL94, VO at 1/8″
  • Weight: 70 mg (approximately)
  • Finish: All External Surfaces Corrosion Resistant and Terminal
    Leads are Readily Solderable
  • Lead and Mounting Surface Temperature for Soldering Purposes:
    260°C Max. for 10 Seconds
  • Polarity: Polarity Band Indicates Cathode Lead
  • Available in 12 mm Tape, 5000 Units per 13 inch Reel
  • Device Meets MSL1 Requirements
  • ESD Ratings: Machine Model, C (>400 V)Human Body Model, 3B (>8000 V)
  • Marking: B1E2
封装图 PACKAGE DIMENSIONS

MBRA120ET3封装图

订购信息 Ordering Information
产品 状况 Compliance 具体说明 封装 MSL* 容器 预算价格 (1千个数量的单价)
类型 外形 类型 数量
MBRA120ET3G Active
AEC Qualified
Pb-free
Halide free
20 V, 1.0 A Low Leakage Schottky Rectifier SMA-2 403D-02 1 Tape and Reel 5000 $0.1163
MBRA120ET3 Last Shipments
20 V, 1.0 A Low Leakage Schottky Rectifier SMA-2 403D-01 1 Tape and Reel 5000  
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20 V, 1.0 A Low Leakage Schottky Rectifier MBRA120ET3-D(417.0kB) 1