MBRAF1100:1.0 A, 100 V Schottky Rectifier
The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier's state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. It is ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system.
技术特性
- Rectangular Package for Automated Handling
- Highly Stable Oxide Passivated Junction
- High Blocking Voltage − 100 V
- 150°C Operating Junction Temperature
- Guardring for Stress Protection
- This is a Pb−Free Device
Mechanical Characteristics
- Case: Epoxy, Molded
- Weight: 95 mg (approximately)
- Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
- Lead and Mounting Surface Temperature for Soldering Purposes:260°C Max. for 10 Seconds
- Shipped in 12 mm Tape and Reel, 5000 Units per Reel
- Cathode Polarity Band
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封装图 PACKAGE DIMENSIONS
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订购信息 Ordering Information
| 产品 |
状况 |
Compliance |
具体说明 |
封装 |
MSL* |
容器 |
预算价格 (1千个数量的单价） |
| 类型 |
外形 |
类型 |
数量 |
| MBRAF1100T3G |
Active |
| AEC Qualified |
| Pb-free |
| Halide free |
|
1.0 A, 100 V Schottky Rectifier |
SMA FL |
403AA |
1 |
Tape and Reel |
5000 |
$0.122 |
数据资料DataSheet下载
