MBRAF260:60 V, 2.0 A Low VF Schottky Rectifier

This device employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system.

技术特性
  • Low Profile Package for Space Constrained Applications
  • Rectangular Package for Automated Handling
  • Highly Stable Oxide Passivated Junction
  • 150°C Operating Junction Temperature
  • Guard−Ring for Stress Protection
  • These are Pb−Free and Halide−Free Devices
    Mechanical Charactersistics
  • Case: Epoxy, Molded, Epoxy Meets UL 94, V−0
  • Weight: 95 mg (approximately)
  • Finish: All External Surfaces Corrosion Resistant and Terminal
    Leads are Readily Solderable
  • °C Max. for 10 Seconds
  • Cathode Polarity Band
  • Device Meets MSL 1 Requirements
  • ESD Ratings: Machine Model = C
    ESD Ratings: Human Body Model = 3B
封装图 PACKAGE DIMENSIONS

MBRAF260封装图

订购信息 Ordering Information
产品 状况 Compliance 具体说明 封装 MSL* 容器 预算价格 (1千个数量的单价)
类型 外形 类型 数量
MBRAF260T3G Active
AEC Qualified
Pb-free
Halide free
60 V, 2.0 A Low VF Schottky Rectifier SMA FL 403AA 1 Tape and Reel 5000 $0.0811
数据资料DataSheet下载
概述 文档编号/大小 版本
60 V, 2.0 A Low VF Schottky Rectifier MBRAF260-D(417.0kB) 1