MBRB8H100T4G:100 V, 8.0 A Schottky Rectifier

The Schottky Rectifier employs the Schottky Barrier principle in a large metal-to-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. It is ideally suited for use as rectifiers in low voltage, high frequency inverters, free wheeling diodes and polarity protection diodes.

技术特性
  • Guardring for Stress Protection
  • Maximum Die Size
  • 175C Operating Junction Temperature
  • Short Heat Sink Tab Manufactured − Not Sheared
  • AEC−Q101 Qualified and PPAP Capable
  • NRVBB Prefix for Automotive and Other Applications Requiring
    Unique Site and Control Change Requirements
  • All Packages are Pb−Free*
    Mechanical Characteristics:
  • Case: Epoxy, Molded, Epoxy Meets UL 94 V−0
  • Weight: 1.7 Grams (Approximately)
  • Finish: All External Surfaces Corrosion Resistant and Terminal
    Leads Readily Solderable
  • Device Meets MSL1 Requirements
  • ESD Ratings:
     Machine Model = C (> 400 V)
     Human Body Model = 3B (> 8000 V)
应用
  • Switching Power Supplies, Power Inverters
封装图 PACKAGE DIMENSIONS

MBRB8H100T4G封装图

订购信息 Ordering Information
产品 状况 Compliance 具体说明 封装 MSL* 容器 预算价格 (1千个数量的单价)
类型 外形 类型 数量
MBRB8H100T4G Active
Pb-free
Halide free
100 V, 8.0 A Schottky Rectifier D2PAK-3 418B-04 1 Tape and Reel 800 $0.68
NBRB8H100T4G Active
AEC Qualified
PPAP Capable
Pb-free
Halide free
100 V, 8.0 A Schottky Rectifier D2PAK-3 418B-04 1 Tape and Reel 800 $0.46
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100 V, 8.0 A Schottky Rectifier MBRB8H100T4G-D(417.0kB) 1