MBRF2060CT: 60 V, 20 A Schottky Rectifier

The Schottky Rectifier employs the Schottky Barrier principle in a large metal to silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. It is ideally suited for use in low voltage, high frequency switching power supplies, free wheeling diodes and polarity protection diodes.

技术特性
  • Highly Stable Oxide Passivated Junction
  • Very Low Forward Voltage Drop
  • Matched Dual Die Construction
  • High Junction Temperature Capability
  • High dv/dt Capability
  • Excellent Ability to Withstand Reverse Avalanche Energy Transients
  • Guardring for Stress Protection
  • Epoxy Meets UL 94 V−0 @ 0.125 in
  • Electrically Isolated. No Isolation Hardware Required.
  • Pb−Free Package is Available*
    Mechanical Characteristics:
  • Case: Epoxy, Molded
  • Weight: 1.9 Grams (Approximately)
  • Finish: All External Surfaces Corrosion Resistant and Terminal
    Leads are Readily Solderable
  • Lead Temperature for Soldering Purposes:
    260°C Max. for 10 Seconds
封装图 PACKAGE DIMENSIONS

MBRF2060CT封装图

订购信息 Ordering Information
产品 状况 Compliance 具体说明 封装 MSL* 容器 预算价格 (1千个数量的单价)
类型 外形 类型 数量
MBRF2060CTG Active
Pb-free
60 V, 20 A Schottky Rectifier TO-220 FULLPAK-3 221D-03 Tube 50 $2.0
MBRF2060CT Last Shipments
60 V, 20 A Schottky Rectifier TO-220 FULLPAK-3 221D-03 Tube 50  
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60 V, 20 A Schottky Rectifier MBRF2060CT-D(417.0kB) 1